High Aspect Ratio Structure Trench Pattern Wafer 'PT063'
Achieving high-aspect-ratio trench pattern wafers with deep etching technology.
Our company strongly supports customers' technology and product development with test wafers using advanced semiconductor technology. (Bare Si wafers / Film-coated wafers / Patterned wafers) The trench patterned wafer 'PT063' achieves a high aspect structure through deep etching technology using the Bosch process. Our standard layout features trench patterns with mask dimensions ranging from 0.2µm to 10µm, with a maximum aspect ratio of approximately 40 to 65. We recommend this product as a solution to meet the needs of those seeking to enhance development efficiency. Please make use of it. *For more details, please download the PDF or feel free to contact us.
- 企業：フィルテック 本社
- 価格：Other
